STGB7NB60KDT4 Details_STGB7NB60KDT4 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tape & Reel (TR)
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	14 A
Current - Collector Pulsed (Icm)	56 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 7A
Power - Max	80 W
Switching Energy	140µJ (off)
Input Type	Standard
Gate Charge	32.7 nC
Td (on/off) @ 25°C	15ns/50ns
Test Condition	480V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

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