STGP18N40LZ Details_STGP18N40LZ PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	420 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 4.5V, 10A
Power - Max	150 W
Switching Energy	-
Input Type	Logic
Gate Charge	29 nC
Td (on/off) @ 25°C	650ns/13.5µs
Test Condition	300V, 10A, 5V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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