GT8G133(TE12L,Q) Details_GT8G133(TE12L,Q) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	400 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 4V, 150A
Power - Max	600 mW
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	1.7µs/2µs
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP

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