IXBF42N300 Details_IXBF42N300 PDF Document

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	3000 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	380 A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 42A
Power - Max	240 W
Switching Energy	-
Input Type	Standard
Gate Charge	200 nC
Td (on/off) @ 25°C	72ns/445ns
Test Condition	1500V, 42A, 20Ohm, 15V
Reverse Recovery Time (trr)	1.7 µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	i4-Pac™-4, Isolated
Supplier Device Package	ISOPLUS i4-PAC™

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