SGL60N90DG3TU Details_SGL60N90DG3TU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 60A
Power - Max	180 W
Switching Energy	-
Input Type	Standard
Gate Charge	260 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	1.5 µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264-3

Other

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