APT20GN60SDQ2G Details_APT20GN60SDQ2G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 20A
Power - Max	136 W
Switching Energy	230µJ (on), 580µJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	9ns/140ns
Test Condition	400V, 20A, 4.3Ohm, 15V
Reverse Recovery Time (trr)	30 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	D3PAK

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