STGWT38IH130D Details_STGWT38IH130D PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1300 V
Current - Collector (Ic) (Max)	63 A
Current - Collector Pulsed (Icm)	125 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	250 W
Switching Energy	3.4mJ (off)
Input Type	Standard
Gate Charge	127 nC
Td (on/off) @ 25°C	-/284ns
Test Condition	960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3P

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