NGB8207NT4G Details_NGB8207NT4G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	365 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	50 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 4V, 20A
Power - Max	165 W
Switching Energy	-
Input Type	Logic
Gate Charge	-
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

Other

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