STGF6M65DF2 Details_STGF6M65DF2 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	M
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	12 A
Current - Collector Pulsed (Icm)	24 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 6A
Power - Max	24.2 W
Switching Energy	36µJ (on), 200µJ (off)
Input Type	Standard
Gate Charge	21.2 nC
Td (on/off) @ 25°C	15ns/90ns
Test Condition	400V, 6A, 22Ohm, 15V
Reverse Recovery Time (trr)	140 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP

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