FGY75N60SMD Details_FGY75N60SMD PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	150 A
Current - Collector Pulsed (Icm)	225 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 75A
Power - Max	750 W
Switching Energy	2.3mJ (on), 770µJ (off)
Input Type	Standard
Gate Charge	248 nC
Td (on/off) @ 25°C	24ns/136ns
Test Condition	400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr)	55 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	PowerTO-247-3

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