IRGP50B60PD1-EP Details_IRGP50B60PD1-EP PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	75 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	2.85V @ 15V, 50A
Power - Max	390 W
Switching Energy	255µJ (on), 375µJ (off)
Input Type	Standard
Gate Charge	205 nC
Td (on/off) @ 25°C	30ns/130ns
Test Condition	390V, 33A, 3.3Ohm, 15V
Reverse Recovery Time (trr)	42 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-247AD

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