FGAF20S65AQ Details_FGAF20S65AQ PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 20A
Power - Max	75 W
Switching Energy	345µJ (on), 95µJ (off)
Input Type	Standard
Gate Charge	38 nC
Td (on/off) @ 25°C	18ns/102ns
Test Condition	400V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr)	235 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3PF-3

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