APT30GS60KRG Details_APT30GS60KRG PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	54 A
Current - Collector Pulsed (Icm)	113 A
Vce(on) (Max) @ Vge, Ic	3.15V @ 15V, 30A
Power - Max	250 W
Switching Energy	570µJ (off)
Input Type	Standard
Gate Charge	145 nC
Td (on/off) @ 25°C	16ns/360ns
Test Condition	400V, 30A, 9.1Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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