IRG4BH20K-L Details_IRG4BH20K-L PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	11 A
Current - Collector Pulsed (Icm)	22 A
Vce(on) (Max) @ Vge, Ic	4.3V @ 15V, 5A
Power - Max	60 W
Switching Energy	450µJ (on), 440µJ (off)
Input Type	Standard
Gate Charge	28 nC
Td (on/off) @ 25°C	23ns/93ns
Test Condition	960V, 5A, 50Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	TO-262

Other

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