DGTD65T60S2PT Details_DGTD65T60S2PT PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	100 A
Current - Collector Pulsed (Icm)	180 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 60A
Power - Max	428 W
Switching Energy	920µJ (on), 530µJ (off)
Input Type	Standard
Gate Charge	95 nC
Td (on/off) @ 25°C	42ns/142ns
Test Condition	400V, 60A, 7Ohm, 15V
Reverse Recovery Time (trr)	205 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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