FGPF30N30TDTU Details_FGPF30N30TDTU PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	300 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 10A
Power - Max	44.6 W
Switching Energy	-
Input Type	Standard
Gate Charge	65 nC
Td (on/off) @ 25°C	22ns/130ns
Test Condition	200V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)	22 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220F

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