IRG4IBC30KDPBF Details_IRG4IBC30KDPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	17 A
Current - Collector Pulsed (Icm)	34 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 16A
Power - Max	45 W
Switching Energy	600µJ (on), 580µJ (off)
Input Type	Standard
Gate Charge	67 nC
Td (on/off) @ 25°C	60ns/160ns
Test Condition	480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr)	42 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220AB Full-Pak

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