SGS5N150UFTU Details_SGS5N150UFTU PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1.5 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	20 A
Vce(on) (Max) @ Vge, Ic	5.5V @ 10V, 5A
Power - Max	50 W
Switching Energy	190µJ (on), 100µJ (off)
Input Type	Standard
Gate Charge	30 nC
Td (on/off) @ 25°C	10ns/30ns
Test Condition	600V, 5A, 10Ohm, 10V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220F

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