IRGP6690D-EPBF Details_IRGP6690D-EPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	140 A
Current - Collector Pulsed (Icm)	225 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 75A
Power - Max	483 W
Switching Energy	2.4mJ (on), 2.2mJ (off)
Input Type	Standard
Gate Charge	140 nC
Td (on/off) @ 25°C	85ns/222ns
Test Condition	400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)	90 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD

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