GT30J121(Q) Details_GT30J121(Q) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	*
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Power - Max	170 W
Switching Energy	1mJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	90ns/300ns
Test Condition	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)

Other

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