HGTP7N60A4 Details_HGTP7N60A4 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	34 A
Current - Collector Pulsed (Icm)	56 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 7A
Power - Max	125 W
Switching Energy	55µJ (on), 60µJ (off)
Input Type	Standard
Gate Charge	37 nC
Td (on/off) @ 25°C	11ns/100ns
Test Condition	390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

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