IRGP4263PBF Details_IRGP4263PBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	90 A
Current - Collector Pulsed (Icm)	192 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 48A
Power - Max	300 W
Switching Energy	1.7mJ (on), 1mJ (off)
Input Type	Standard
Gate Charge	150 nC
Td (on/off) @ 25°C	70ns/140ns
Test Condition	400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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