FGD3N60LSDTM-T Details_FGD3N60LSDTM-T PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	6 A
Current - Collector Pulsed (Icm)	25 A
Vce(on) (Max) @ Vge, Ic	1.5V @ 10V, 3A
Power - Max	40 W
Switching Energy	250µJ (on), 1mJ (off)
Input Type	Standard
Gate Charge	12.5 nC
Td (on/off) @ 25°C	40ns/600ns
Test Condition	480V, 3A, 470Ohm, 10V
Reverse Recovery Time (trr)	234 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252, (D-Pak)

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