APT200GN60B2G Details_APT200GN60B2G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	283 A
Current - Collector Pulsed (Icm)	600 A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 200A
Power - Max	682 W
Switching Energy	13mJ (on), 11mJ (off)
Input Type	Standard
Gate Charge	1180 nC
Td (on/off) @ 25°C	50ns/560ns
Test Condition	400V, 200A, 1Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	-

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