IRG7CH75K10EF-R Details_IRG7CH75K10EF-R PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	1.53V @ 15V, 20A
Power - Max	-
Switching Energy	-
Input Type	Standard
Gate Charge	500 nC
Td (on/off) @ 25°C	120ns/445ns
Test Condition	600V, 100A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

Other

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