NGP15N41CLG Details_NGP15N41CLG PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	440 V
Current - Collector (Ic) (Max)	15 A
Current - Collector Pulsed (Icm)	50 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 4V, 10A
Power - Max	107 W
Switching Energy	-
Input Type	Logic
Gate Charge	-
Td (on/off) @ 25°C	-/4µs
Test Condition	300V, 6.5A, 1kOhm
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

Other

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