APT43GA90BD30 Details_APT43GA90BD30 PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	78 A
Current - Collector Pulsed (Icm)	129 A
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 47A
Power - Max	337 W
Switching Energy	875µJ (on), 425µJ (off)
Input Type	Standard
Gate Charge	116 nC
Td (on/off) @ 25°C	12ns/82ns
Test Condition	600V, 25A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

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