FGA40T65UQDF Details_FGA40T65UQDF PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	1.67V @ 15V, 40A
Power - Max	231 W
Switching Energy	989µJ (on), 310µJ (off)
Input Type	Standard
Gate Charge	306 nC
Td (on/off) @ 25°C	32ns/271ns
Test Condition	400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr)	89 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN

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