IHW20N135R3FKSA1 Details_IHW20N135R3FKSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 20A
Power - Max	310 W
Switching Energy	1.3mJ (off)
Input Type	Standard
Gate Charge	195 nC
Td (on/off) @ 25°C	-/335ns
Test Condition	600V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-41

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