IHW50N65R5XKSA1 Details_IHW50N65R5XKSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	TrenchStop®
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 50A
Power - Max	282 W
Switching Energy	740µJ (on), 180µJ (off)
Input Type	Standard
Gate Charge	230 nC
Td (on/off) @ 25°C	26ns/220ns
Test Condition	400V, 25A, 8Ohm, 15V
Reverse Recovery Time (trr)	95 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3

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