SGL160N60UFDTU Details_SGL160N60UFDTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	160 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 80A
Power - Max	250 W
Switching Energy	2.5mJ (on), 1.76mJ (off)
Input Type	Standard
Gate Charge	345 nC
Td (on/off) @ 25°C	40ns/90ns
Test Condition	300V, 80A, 3.9Ohm, 15V
Reverse Recovery Time (trr)	95 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264-3

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