RJP65T43DPQ-A0#T2 Details_RJP65T43DPQ-A0#T2 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 20A
Power - Max	150 W
Switching Energy	170µJ (on), 130µJ (off)
Input Type	Standard
Gate Charge	69 nC
Td (on/off) @ 25°C	35ns/105ns
Test Condition	400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247A

Other

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