IRG4PH40KDPBF Details_IRG4PH40KDPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 15A
Power - Max	160 W
Switching Energy	1.31mJ (on), 1.12mJ (off)
Input Type	Standard
Gate Charge	94 nC
Td (on/off) @ 25°C	50ns/96ns
Test Condition	800V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)	63 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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