FGA6065ADF Details_FGA6065ADF PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	180 A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 60A
Power - Max	306 W
Switching Energy	2.46mJ (on), 520µJ (off)
Input Type	Standard
Gate Charge	84 nC
Td (on/off) @ 25°C	25.6ns/71ns
Test Condition	400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr)	110 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN

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