TIG111BF Details_TIG111BF PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	23 A
Current - Collector Pulsed (Icm)	92 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 10A
Power - Max	2 W
Switching Energy	-
Input Type	Standard
Gate Charge	63 nC
Td (on/off) @ 25°C	43ns/175ns
Test Condition	300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FI(LS)

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