STGF3NB60FD Details_STGF3NB60FD PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	6 A
Current - Collector Pulsed (Icm)	24 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 3A
Power - Max	25 W
Switching Energy	125µJ (off)
Input Type	Standard
Gate Charge	16 nC
Td (on/off) @ 25°C	12.5ns/105ns
Test Condition	480V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)	45 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP

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