IRG7PSH54K10DPBF Details_IRG7PSH54K10DPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Power - Max	520 W
Switching Energy	4.8mJ (on), 2.8mJ (off)
Input Type	Standard
Gate Charge	435 nC
Td (on/off) @ 25°C	110ns/490ns
Test Condition	600V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)	170 ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	SUPER-247™ (TO-274AA)

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