APT35GN120L2DQ2G Details_APT35GN120L2DQ2G PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	94 A
Current - Collector Pulsed (Icm)	105 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Power - Max	379 W
Switching Energy	2.315mJ (off)
Input Type	Standard
Gate Charge	220 nC
Td (on/off) @ 25°C	24ns/300ns
Test Condition	800V, 35A, 2.2Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	-

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