STGWA8M120DF3 Details_STGWA8M120DF3 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	M
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	16 A
Current - Collector Pulsed (Icm)	32 A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 8A
Power - Max	167 W
Switching Energy	390µJ (on), 370µJ (Off)
Input Type	Standard
Gate Charge	32 nC
Td (on/off) @ 25°C	20ns/126ns
Test Condition	600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr)	103 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 Long Leads

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