STGB35N35LZ-1 Details_STGB35N35LZ-1 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	345 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 4.5V, 15A
Power - Max	176 W
Switching Energy	-
Input Type	Logic
Gate Charge	49 nC
Td (on/off) @ 25°C	1.1µs/26.5µs
Test Condition	300V, 15A, 5V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	I2PAK (TO-262)

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