FGPF7N60LSDTU Details_FGPF7N60LSDTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	14 A
Current - Collector Pulsed (Icm)	21 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 7A
Power - Max	45 W
Switching Energy	270µJ (on), 3.8mJ (off)
Input Type	Standard
Gate Charge	24 nC
Td (on/off) @ 25°C	120ns/410ns
Test Condition	300V, 7A, 470Ohm, 15V
Reverse Recovery Time (trr)	65 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220F

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