IRG4PH30K Details_IRG4PH30K PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	4.2V @ 15V, 10A
Power - Max	100 W
Switching Energy	640µJ (on), 920µJ (off)
Input Type	Standard
Gate Charge	53 nC
Td (on/off) @ 25°C	28ns/200ns
Test Condition	960V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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