SKB06N60HSATMA1 Details_SKB06N60HSATMA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	12 A
Current - Collector Pulsed (Icm)	24 A
Vce(on) (Max) @ Vge, Ic	3.15V @ 15V, 6A
Power - Max	68 W
Switching Energy	190µJ
Input Type	Standard
Gate Charge	33 nC
Td (on/off) @ 25°C	11ns/196ns
Test Condition	400V, 6A, 50Ohm, 15V
Reverse Recovery Time (trr)	100 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3-2

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