FGA50N100BNTTU Details_FGA50N100BNTTU PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT and Trench
Voltage - Collector Emitter Breakdown (Max)	1 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Power - Max	156 W
Switching Energy	-
Input Type	Standard
Gate Charge	257 nC
Td (on/off) @ 25°C	34ns/243ns
Test Condition	600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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