STGP10NB60S Details_STGP10NB60S PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	29 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 10A
Power - Max	80 W
Switching Energy	600µJ (on), 5mJ (off)
Input Type	Standard
Gate Charge	33 nC
Td (on/off) @ 25°C	700ns/1.2µs
Test Condition	480V, 10A, 1kOhm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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