FGH75T65SQDNL4 Details_FGH75T65SQDNL4 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	200 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Power - Max	375 W
Switching Energy	1.25mJ (on), 1.26mJ (off)
Input Type	Standard
Gate Charge	152 nC
Td (on/off) @ 25°C	44ns/208ns
Test Condition	400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)	134 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-4
Supplier Device Package	TO-247-4L

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