APT11GP60BDQBG Details_APT11GP60BDQBG PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 7®
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	41 A
Current - Collector Pulsed (Icm)	45 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 11A
Power - Max	187 W
Switching Energy	46µJ (on), 90µJ (off)
Input Type	Standard
Gate Charge	40 nC
Td (on/off) @ 25°C	7ns/29ns
Test Condition	400V, 11A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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