SIGC25T60UNX7SA1 Details_SIGC25T60UNX7SA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	3.15V @ 15V, 30A
Power - Max	-
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	16ns/122ns
Test Condition	400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

Other

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