BSV80 Details_BSV80 PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	40 V
Current - Drain (Idss) @ Vds (Vgs=0)	10 mA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds	5pF @ 10V
Resistance - RDS(On)	60 Ohms
Power - Max	350 mW
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18

Other

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