NTE459 Details_NTE459 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	50 V
Drain to Source Voltage (Vdss)	50 V
Current - Drain (Idss) @ Vds (Vgs=0)	2 mA @ 15 V
Current Drain (Id) - Max	10 mA
Voltage - Cutoff (VGS off) @ Id	6 V @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds	6pF @ 15V
Resistance - RDS(On)	-
Power - Max	300 mW
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

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